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 Sofia  Scott
PO Box 1066
Madison, AL 35001
telephone: (256) 425-9876
email: sofia@earthlink.net

Summary
Professional skills:
-          High frequency power conversion analysis and simulation support
-          Design of electronic ballasts for lighting
-          Power supply specification and vendor interaction for radar systems
-          High Voltage Integrated Circuit (HVIC) and component design
-          Component and system modeling using SPICE and Saber
-          Semiconductor device design

Professional Experience
2007 to 2011  Professional Experience. Huntsville, AL  
Independent Research
·         Developing advanced averaged switchmode modeling techniques using SPICE. 
2006 to 2007   Universal Lighting Technologies, Huntsville, AL  
Chief Engineer
·         Designed high frequency ballasts for fluorescent lighting. 
·         Ballasts incorporated features such as Power Factor Correction, resonant inverters, and dimming capability. 
·         Duties included design, simulation, and extensive design verification testing.
2001 to 2004   Raytheon Power and Electronic Systems Department, Sudbury, MA  
Senior Engineer
·         Technical vendor interface for multi-volt power supplies in large military radar systems. This included the review, modification, and generation of detailed technical design specifications, vendor design reviews, production schedules, failure investigations, etc.
·         Verified vendor designs for megawatt level input EMI filters. Detailed analyses included simulation of two complete radar power systems’ response to HEMP transients and included generators, magnetics, transmission lines, filters, loads, etc.
·         Detailed simulation analysis demonstrating a suspected power system failure mode.
·         Analyzed in detail the benefits/tradeoffs of increased output filter capacitance in a high power, high voltage supply.
·         Assembled and verified, using extensive test and burn-in procedures, multivolt supplies, using subcomponents from failed units, for a very large radar system. Generated detailed replacement specifications for this sequenced supply based on extensive testing of the original undocumented, unsupported COTS supply.
·         Provided support for a legacy klystron-based radar including replacement of obsolete optocoupler components. Authored installation documentation for a high voltage solid state modulator (high voltage switch) upgrade.
·         Performed reviews of two medium and high voltage military radar systems with regard to corona susceptibility and cable ampacity resulting in significant impacts on system design/specifications. Identified insufficient air spacings and discovered a major 4160v cable insulation thickness issue that would have limited system features.
1993 to 2001               V I Engineering, Farmington Hills, MI  
Simulation Consultant
·         Developed numerous realistic simulation solutions for hardware applications incorporating electronic, semiconductor, integrated circuit, mechanical, electro-thermal, electro-magnetic, and microcontroller components.  A typical project might be the creation of a Saber model for a relay driver IC where both the electrical and thermal shutdown characteristics are important. 
·         Created a successful Saber model of an entire automotive Electronic Throttle Control system including the pedal position sensor, microprocessor PID control, an H-bridge MOSFET power driver, and the DC motor/gear box/friction/throttle body assembly.  This model incorporated an accurate ‘averaged’ power driver model that included both detailed switch characteristics and continuous/discontinuous switching mode operation.
1986 to 1993               GE Corporate Research and Development, Schenectady, NY       
Electrical Engineer
·         Designed innovative High Voltage (400v) Integrated Circuit/semiconductor ICs for a compact telecommunications switching system.  IC featured eighteen 400v drivers, a unique high voltage output pull-up device, and very low power consumption.
·         Developed novel SPICE-compatible and analytical power MOSFET and diode modeling techniques, including very realistic models used in the design and optimization of switching converters and synchronous rectifier circuits.
·         Analyzed a high efficiency 13 megahertz resonant converter for an electrodeless lamp ballast using advanced component modeling, resulting in efficiency prediction within 1% with accurate waveforms.  Proposed practical ways to implement electronic tuning.
·         Modeled, analyzed, and designed experimental 100 megahertz switching power converter circuits and devices (please note that megahertz, and not kilohertz, is correct).
1977 to 1986   AT+T Bell Labs, Reading, PA and Murray Hill, NJ      
Member of Technical Staff
·         Designed a unique 140 volt Telephone Interface Circuit IC that implemented telephone dial pulse switching and polarity guard functions.  It was manufactured by AT&T, used in their telephones, and sold commercially for a number of years.
·         Designed a large variety of experimental integrated high voltage (600 volt) gated diode (static induction thyristor), bipolar, and MOS devices. 
·         Developed automated test programs and hardware for experimental high voltage ICs.
·         Designed experimental discrete high voltage gated diode devices that provided the basis for later integrated gated diode crosspoint IC’s (one of my designs is pictured on the cover of the March 1981 Proceedings of the IEEE).

Education
Georgia Institute of Technology, Atlanta, Ga., M.S., Electrical Engineering, GPA=3.7/4.0, 1977

University of Arizona, Tucson, Arizona, Field of Study: Astrophysics, GPA=3.7/4.0, 1975

Michigan State University, East Lansing, Michigan, Bachelor of Science, Physics, GPA=3.8/4.0, 1974

Selected Publications
"An Accurate Model For Power DMOSFET's Including Interelectrode Capacitances,"  Scott, R. S.; Franz, G. A.; Johnson, J. L., IEEE Transactions on Power Electronics, vol. 6, no. 2, April 1991
"Use of Accurate MOS Models For Optimizing Resonant Converter Designs," Franz, G. A.; Walden, J. P.; Scott, R. S.; Bicknell, W. H.; Steigerwald, R. L., Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting, p. 1564-1568
"High Voltage Pull-Up Devices In a BiMOS HVIC Technology," Scott, R. S.; Pattanayak, D. N.; Kohl, J. E.; Adler, M. S.; Ehle, R. E.; Wildi, E. J., International Electron Devices Meeting, Technical Digest, 1988, p. 800-803
"Optimum Semiconductors For High-Power Electronics," Shenai, K.; Scott, R. S.; Baliga, B. J., IEEE Transactions on Electron Devices, vol. 36, no. 9, Sept. 1989, p. 1811-1823
"A New Bidirectional Solid-State Switch For Telephone Loop Plant Applications," Shackle, P. W.; Hartman, A. R.; Murphy, B. T.; Scott, R. S.; Lieberman, R.; Robinson, M., Proceedings of the IEEE, vol. 69, no. 3, March 1981, p. 292-299

OTHER
Previous Secret Security Clearance. 
Six patents (5,600,187; 4,868,620; 4,309,715; 4,982,262; 4,795,917; 4,271,445).



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