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Professional Experience
University
of Arizona ,
Tucson , Arizona ,
Field of Study: Astrophysics, GPA=3.7/4.0, 1975
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Sofia Scott
PO Box 1066
Madison ,
AL 35001
telephone: (256) 425-9876
email: sofia@earthlink.net
telephone: (256) 425-9876
email: sofia@earthlink.net
Summary
Professional skills:
-
High
frequency power conversion analysis and simulation support
-
Design of electronic
ballasts for lighting
-
Power supply specification
and vendor interaction for radar systems
-
High
Voltage Integrated Circuit (HVIC) and component design
-
Component and system
modeling using SPICE and Saber
-
Semiconductor device design
Professional Experience
2007 to 2011 Professional Experience. Huntsville ,
AL
Independent Research
·
Developing advanced averaged
switchmode modeling techniques using SPICE.
2006 to
2007 Universal Lighting Technologies, Huntsville ,
AL
Chief Engineer
·
Designed high frequency
ballasts for fluorescent lighting.
·
Ballasts incorporated features
such as Power Factor Correction, resonant inverters, and dimming
capability.
·
Duties included design,
simulation, and extensive design verification testing.
2001 to
2004 Raytheon Power and Electronic
Systems Department, Sudbury ,
MA
Senior Engineer
·
Technical vendor interface for multi-volt
power supplies in large military radar systems. This included the review,
modification, and generation of detailed technical design specifications,
vendor design reviews, production schedules, failure investigations, etc.
·
Verified vendor designs for megawatt
level input EMI filters. Detailed analyses included simulation of two complete
radar power systems’ response to HEMP transients and included generators,
magnetics, transmission lines, filters, loads, etc.
·
Detailed simulation analysis
demonstrating a suspected power system failure mode.
·
Analyzed in detail the benefits/tradeoffs
of increased output filter capacitance in a high power, high voltage supply.
·
Assembled and verified, using
extensive test and burn-in procedures, multivolt supplies, using subcomponents
from failed units, for a very large radar system. Generated detailed replacement
specifications for this sequenced supply based on extensive testing of the
original undocumented, unsupported COTS supply.
·
Provided support for a legacy
klystron-based radar including replacement of obsolete optocoupler components.
Authored installation documentation for a high voltage solid state modulator (high
voltage switch) upgrade.
·
Performed reviews of two medium
and high voltage military radar systems with regard to corona susceptibility
and cable ampacity resulting in significant impacts on system
design/specifications. Identified insufficient air spacings and discovered a major
4160v cable insulation thickness issue that would have limited system features.
1993
to 2001 V I Engineering, Farmington
Hills , MI
Simulation
Consultant
·
Developed numerous realistic
simulation solutions for hardware applications incorporating electronic,
semiconductor, integrated circuit, mechanical, electro-thermal,
electro-magnetic, and microcontroller components. A typical project might be the creation of a
Saber model for a relay driver IC where both the electrical and thermal
shutdown characteristics are important.
·
Created a successful Saber
model of an entire automotive Electronic Throttle Control system including the
pedal position sensor, microprocessor PID control, an H-bridge MOSFET power
driver, and the DC motor/gear box/friction/throttle body assembly. This model incorporated an accurate
‘averaged’ power driver model that included both detailed switch
characteristics and continuous/discontinuous switching mode operation.
1986
to 1993 GE Corporate
Research and Development, Schenectady , NY
Electrical Engineer
·
Designed innovative High
Voltage (400v) Integrated Circuit/semiconductor ICs for a compact
telecommunications switching system. IC
featured eighteen 400v drivers, a unique high voltage output pull-up device,
and very low power consumption.
·
Developed novel
SPICE-compatible and analytical power MOSFET and diode modeling techniques,
including very realistic models used in the design and optimization of
switching converters and synchronous rectifier circuits.
·
Analyzed a high efficiency 13
megahertz resonant converter for an electrodeless lamp ballast using advanced
component modeling, resulting in efficiency prediction within 1% with accurate
waveforms. Proposed practical ways to
implement electronic tuning.
·
Modeled, analyzed, and designed
experimental 100 megahertz switching power converter circuits and devices (please
note that megahertz, and not kilohertz, is correct).
1977 to 1986 AT+T Bell Labs, Reading , PA
and Murray Hill , NJ
Member
of Technical Staff
·
Designed a unique 140 volt
Telephone Interface Circuit IC that implemented telephone dial pulse switching
and polarity guard functions. It was manufactured
by AT&T, used in their telephones, and sold commercially for a number of
years.
·
Designed a large variety of
experimental integrated high voltage (600 volt) gated diode (static induction
thyristor), bipolar, and MOS devices.
·
Developed automated test
programs and hardware for experimental high voltage ICs.
·
Designed experimental discrete
high voltage gated diode devices that provided the basis for later integrated
gated diode crosspoint IC’s (one of my designs is pictured on the cover of the
March 1981 Proceedings of the IEEE).
Education
Georgia Institute of Technology,
Atlanta , Ga. ,
M.S., Electrical Engineering, GPA=3.7/4.0, 1977
Michigan State University,
East Lansing, Michigan, Bachelor of Science, Physics, GPA=3.8/4.0, 1974
Selected Publications
"An Accurate Model For Power
DMOSFET's Including Interelectrode Capacitances," Scott,
R. S.; Franz, G. A.; Johnson, J. L., IEEE Transactions on Power
Electronics, vol. 6, no. 2, April 1991
"Use of Accurate MOS Models
For Optimizing Resonant Converter Designs," Franz, G. A.; Walden, J. P.; Scott, R. S.; Bicknell, W. H.;
Steigerwald, R. L., Conference Record of the 1990 IEEE Industry Applications
Society Annual Meeting, p. 1564-1568
"High Voltage Pull-Up
Devices In a BiMOS HVIC Technology," Scott,
R. S.; Pattanayak, D. N.; Kohl, J. E.; Adler, M. S.; Ehle, R. E.; Wildi, E.
J., International Electron Devices Meeting, Technical Digest, 1988, p. 800-803
"Optimum Semiconductors For
High-Power Electronics," Shenai, K.; Scott,
R. S.; Baliga, B. J., IEEE Transactions on Electron Devices, vol. 36, no.
9, Sept. 1989, p. 1811-1823
"A New Bidirectional
Solid-State Switch For Telephone Loop Plant Applications," Shackle, P. W.;
Hartman, A. R.; Murphy, B. T.; Scott, R.
S.; Lieberman, R.; Robinson, M., Proceedings of the IEEE, vol. 69, no. 3,
March 1981, p. 292-299
OTHER
Previous Secret Security
Clearance.
Six patents (5,600,187;
4,868,620; 4,309,715; 4,982,262; 4,795,917; 4,271,445).
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